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Blue (In,Ga)N light-emitting diodes with buried n + – p + tunnel junctions by plasma-assisted molecular beam epitaxy

https://doi.org/10.7567/1347-4065/ab1e78

Cho, YongJin ; Bharadwaj, Shyam ; Hu, Zongyang ; Nomoto, Kazuki ; Jahn, Uwe ; Xing, Huili Grace ; Jena, Debdeep ( June 2019 , Japanese Journal of Applied Physics)

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GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

https://doi.org/10.1364/OL.45.000121

Wei, Tongbo ; Islam, S. M. ; Jahn, Uwe ; Yan, Jianchang ; Lee, Kevin ; Bharadwaj, Shyam ; Ji, Xiaoli ; Wang, Junxi ; Li, Jinmin ; Protasenko, Vladimir ; et al ( December 2019 , Optics Letters)

We report optically and electrically pumped $\sim<#comment/> 280 n m$ deep ultraviolet (DUV) light emitting diodes (LEDs) with ultra-thin GaN/AlN quantum disks (QDs) inserted into AlGaN nanorods by selective epitaxial regrowth using molecular beam epitaxy. The GaN/AlN QD LED has shown strong DUV emission distribution on the ordered nanorods and high internal quantum efficiency of 81.2%, as a result of strain release and reduced density of threading dislocations revealed by transmission electron microscopy. Nanorod assembly suppresses the lateral guiding mode of light, and light extraction efficiency can be increased from 14.9% for planar DUV LEDs to 49.6% for nanorod DUV LEDs estimated by finite difference time domain simulations. Presented results offer the potential to solve the issue of external quantum efficiency limitation of DUV LED devices.

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